APTGT150A170 APTGT150A170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 250 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 300 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 890 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. q2 0/vb us q1 vb us out g1 g2 e2 e1 out vbus e1 g1 0/vbus g2 e2 v ces = 1700v i c = 150a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile phase leg trench + field stop igbt ? power modul e
APTGT150A170 APTGT150A170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 350 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 3ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 13.5 c oes output capacitance 0.55 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.44 nf t d(on) tur n-o n delay ti me 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 150a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 ns e on turn-on switching energy 48 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 900v i c = 150a r g = 4.7 ? 47 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 350 i rm maximum reverse leakage current v r =1700v t j = 125c 600 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 150 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 150a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 40 q rr reverse recovery charge i f = 150a v r = 900v di/dt =1600a/s t j = 125c 64 c
APTGT150A170 APTGT150A170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.14 r thjc junction to case diode 0.26 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3400 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline (dimensions in mm)
APTGT150A170 APTGT150A170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 50 100 150 200 250 300 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 20 40 60 80 100 120 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff er 0 20 40 60 80 100 120 0 5 10 15 20 25 30 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 150a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT150A170 APTGT150A170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 00.511.522.53 v f (v) i c (a) hard switching zcs zv s 0 5 10 15 20 25 0 40 80 120 160 200 240 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operatin g frequenc y vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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